People >> Dejin Zhou
Dejin Zhou
4th Ph.D student
e-mail：19112020095@fudan.edu.cn
Research Field：wide band gap semiconductor gallium nitride
Education & Work experience
2019.9-present Doctor of engineering, School of microelectronics, Fudan University
2018.1-present Director of semiconductor innovation center, Wuxi Institute of applied technology, Tsinghua University
2016.6-2017.12 Assistant president of taihechi Information System Co., Ltd ,Deputy director of Wuhu microelectronics Leading Group Office
2012.6-2016.6 Manager of Enterprise Development Department of Shengke Network Suzhou Co., Ltd
2009.1-2012.6 Director of planning and Development Department of Zhongkexin integrated circuit Co., Ltd
2008.3-2009.1 DRAM Design of Qimonda R & D center
2005.9-2008.3 Jiangnan University & CCETC 58 institute Master of microelectronics and solid state electronics
2018.1-present Director of semiconductor innovation center, Wuxi Institute of applied technology, Tsinghua University
2016.6-2017.12 Assistant president of taihechi Information System Co., Ltd ,Deputy director of Wuhu microelectronics Leading Group Office
2012.6-2016.6 Manager of Enterprise Development Department of Shengke Network Suzhou Co., Ltd
2009.1-2012.6 Director of planning and Development Department of Zhongkexin integrated circuit Co., Ltd
2008.3-2009.1 DRAM Design of Qimonda R & D center
2005.9-2008.3 Jiangnan University & CCETC 58 institute Master of microelectronics and solid state electronics
Publications
1. Zhou Dejin, sun Feng, Yu Zongguang. Research on high performance full adder design technology [J]. Electronics and packaging, 2008 (01): 29-32
2. Zhou Dejin, sun Feng, Yu Zongguang. Optimization design of 32-bit high-speed Floating-Point Multiplier [J]. Semiconductor technology, 2007 (10): 871-874
3. Fu Yuhai, Zhou Dejin, Bao Jie, et al. Heat dissipation application of graphene in GaN based HEMT [J]. Electronic components and information technology, 2018, 000 (010): 1-4, 9
4. Huang Wei, Zhou Dejin, Xu Yuan, et al. Design of 48V to 1V load point power supply module based on enhanced GaN HEMT [J]. Electronic components and information technology, 2018, 000 (011): 1-3, 10
5. Yan Fangliang, Zhou Dejin. Exploration and practice of sharing laboratory in promoting R & D and Achievement Transformation -- Taking MIG laboratory as an example [J]. New materials industry, 2018, 000 (007): 39-43
6. Huang Wei, Zhou Dejin, Xu Yuan, et al. Design of gate driver for high speed enhanced GaN HEMT [J]. Electronic technology and software engineering, 2018, 000 (022): p.94-95
7. Zhou Dejin, Chen Zhenhai, Zhang Huiguo, et al. A 3.5gb/s transmitter for 14 bit 250ms / SADC [J]. Microelectronics, 2017, v.47; No.272 (06): 752-755
2. Zhou Dejin, sun Feng, Yu Zongguang. Optimization design of 32-bit high-speed Floating-Point Multiplier [J]. Semiconductor technology, 2007 (10): 871-874
3. Fu Yuhai, Zhou Dejin, Bao Jie, et al. Heat dissipation application of graphene in GaN based HEMT [J]. Electronic components and information technology, 2018, 000 (010): 1-4, 9
4. Huang Wei, Zhou Dejin, Xu Yuan, et al. Design of 48V to 1V load point power supply module based on enhanced GaN HEMT [J]. Electronic components and information technology, 2018, 000 (011): 1-3, 10
5. Yan Fangliang, Zhou Dejin. Exploration and practice of sharing laboratory in promoting R & D and Achievement Transformation -- Taking MIG laboratory as an example [J]. New materials industry, 2018, 000 (007): 39-43
6. Huang Wei, Zhou Dejin, Xu Yuan, et al. Design of gate driver for high speed enhanced GaN HEMT [J]. Electronic technology and software engineering, 2018, 000 (022): p.94-95
7. Zhou Dejin, Chen Zhenhai, Zhang Huiguo, et al. A 3.5gb/s transmitter for 14 bit 250ms / SADC [J]. Microelectronics, 2017, v.47; No.272 (06): 752-755