Jia-Jia Tao
5th Ph.D Student
e-mail:17112020036@fudan.edu.cn
Research Field:Low-dimensional Optoelectronic Materials and Devices
Education & Work experience
2017.9-present Fudan University College of Microelectronics Ph.D student
2014.9-2017.9 Anhui University College of Physics and Materials Science M.S.
2010.9-2014.9 Huaibei Normal University College of Physics and Electronic Information B.S.
2014.9-2017.9 Anhui University College of Physics and Materials Science M.S.
2010.9-2014.9 Huaibei Normal University College of Physics and Electronic Information B.S.
Publications
- J.J. Tao, J.B. Jiang, S.N. Zhao, Y. Zhang, X.X. Li, X.S. Fang, P. Wang, W.D. Hu, Y.H. Lee, H.L. Lu, and D.W. Zhang, Fabrication of 1D Te/2D ReS2 mixed-dimensional van der Waals p-n heterojunction for high-performance phototransistor, ACS Nano, 15, 3241-3250 (2021). (IF=15.88)
- J.J. Tao, H.P. Ma, K.P. Yuan, Y. Gu, J.W. Lian, X.X. Li, W. Huang, M. Nolan, H.L. Lu, and D.W. Zhang, Modification of 1D TiO2 nanowires with GaOxNy by atomic layer deposition for TiO2@GaOxNy core-shell nanowires with enhanced photoelectrochemical performance, Nanoscale, 12, 7159-7173 (2020). (IF=7.79)
- J.J. Tao, H.L. Lu, Y. Gu, H.P. Ma, X. Li, J.X. Chen, W.J. Liu, H. Zhang, and J.J. Feng, Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 film, Applied Surface Science, 476, 733-740 (2019). (IF=6.70)
- Y. Gu, J.J. Tao, T. Wang, Y.H. Liu, B.F. Peng, L.Y. Zhu, and H.L. Lu, Nonlinear growth of zinc tin oxide thin films prepared by atomic layer deposition, Ceramics International, 47, 22760-22767 (2021). (IF=4.53)
- J.W. Lian, J.J. Tao, X.J. Chai, Y. Zhang, and A.Q. Jiang, Effects of atmosphere, metal films, temperatures and holding time on the surface topography and electrical conductivity of LiNbO3 single crystals, Ceramics International, 8, 9736-9753 (2019). (IF=4.53)
- Y. Zhang, J.J. Tao, H.Y. Chen, and H.L. Lu, Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature, Nanotechnology, 32, 275704 (2021). (IF=3.87)
- J.X. Chen, J.J. Tao, H. Zhang, H.L. Lu, and D.W. Zhang, Band alignment of AlN/beta-Ga2O3 heterojunction interface measured by X-ray photoelectron spectroscopy, Applied Physics Letters, 112, 261602 (2018). (IF=3.79)