陶佳佳
Jia-Jia Tao
5th Ph.D Student

e-mail：17112020036@fudan.edu.cn
Research Field：Low-dimensional Optoelectronic Materials and Devices
Education & Work experience
2017.9-present         Fudan University                      College of Microelectronics                                          Ph.D student
2014.9-2017.9          Anhui University                       College  of  Physics and Materials Science                 M.S.
2010.9-2014.9          Huaibei Normal University       College of Physics and Electronic Information             B.S.
Publications
  1. J.J. Tao, J.B. Jiang, S.N. Zhao, Y. Zhang, X.X. Li, X.S. Fang, P. Wang, W.D. Hu, Y.H. Lee, H.L. Lu, and D.W. Zhang, Fabrication of 1D Te/2D ReS2 mixed-dimensional van der Waals p-n heterojunction for high-performance phototransistor, ACS Nano, 15, 3241-3250 (2021). (IF=15.88)
  2. J.J. Tao, H.P. Ma, K.P. Yuan, Y. Gu, J.W. Lian, X.X. Li, W. Huang, M. Nolan, H.L. Lu, and D.W. Zhang, Modification of 1D TiO2 nanowires with GaOxNy by atomic layer deposition for TiO2@GaOxNy core-shell nanowires with enhanced photoelectrochemical performance, Nanoscale, 12, 7159-7173 (2020). (IF=7.79)
  3. J.J. Tao, H.L. Lu, Y. Gu, H.P. Ma, X. Li, J.X. Chen, W.J. Liu, H. Zhang, and J.J. Feng, Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 film, Applied Surface Science, 476, 733-740 (2019). (IF=6.70)
  4. Y. Gu, J.J. Tao, T. Wang, Y.H. Liu, B.F. Peng, L.Y. Zhu, and H.L. Lu, Nonlinear growth of zinc tin oxide thin films prepared by atomic layer deposition, Ceramics International, 47, 22760-22767 (2021). (IF=4.53)
  5. J.W. Lian, J.J. Tao, X.J. Chai, Y. Zhang, and A.Q. Jiang, Effects of atmosphere, metal films, temperatures and holding time on the surface topography and electrical conductivity of LiNbO3 single crystals, Ceramics International, 8, 9736-9753 (2019). (IF=4.53)
  6. Y. Zhang, J.J. Tao, H.Y. Chen, and H.L. Lu, Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature, Nanotechnology, 32, 275704 (2021). (IF=3.87)
  7. J.X. Chen, J.J. Tao, H. Zhang, H.L. Lu, and D.W. Zhang, Band alignment of AlN/beta-Ga2O3 heterojunction interface measured by X-ray photoelectron spectroscopy, Applied Physics Letters, 112, 261602 (2018). (IF=3.79)