Jin-Xin Chen
Ph.D Graduate
e-mail：jinxinchen16@fudan.edu.cn
Research Field：Fabrication of high-performance β-Ga2O3 nanobelt transistor and its reliability studies.
Education & Work experience
2016.9-2020.8 Fudan University College of Microelectronics Ph.D
2013.9-2016.6 Shanghai Normal University Department of Physics M.S
2009.9-2013.6 Nanjing Normal University Department of Physics B.S
2013.9-2016.6 Shanghai Normal University Department of Physics M.S
2009.9-2013.6 Nanjing Normal University Department of Physics B.S
Publications
1. Jin-Xin Chen, Hong-Liang Lu*, and David Wei Zhang, Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy, Applied Physics Letters, 112, 261602 (2018).
2. Jin-Xin Chen, Wei Huang, Zhi-Gang Ji, Changtai Xia, Hong-Liang Lu*, and David Wei Zhang, Investigation of the mechanism for Ohmic contact formation in Ti/Al/Ni/Au contacts to β-Ga2O3 nanobelt field-effect transistors, ACS Applied Materials & Interfaces, 11, 32127-32134 (2019).
3. Jin-Xin Chen, Xiao-Xi Li, Wei Huang, Zhi-Gang Ji, Chang-Tai Xia, Hong-Liang Lu*, and David Wei Zhang, Fabrication of a Nb-doped β-Ga2O3 nanobelt field-effect transistor and its low-temperature behavior, ACS Applied Materials & Interfaces, 12, 8437-8445 (2020).
2. Jin-Xin Chen, Wei Huang, Zhi-Gang Ji, Changtai Xia, Hong-Liang Lu*, and David Wei Zhang, Investigation of the mechanism for Ohmic contact formation in Ti/Al/Ni/Au contacts to β-Ga2O3 nanobelt field-effect transistors, ACS Applied Materials & Interfaces, 11, 32127-32134 (2019).
3. Jin-Xin Chen, Xiao-Xi Li, Wei Huang, Zhi-Gang Ji, Chang-Tai Xia, Hong-Liang Lu*, and David Wei Zhang, Fabrication of a Nb-doped β-Ga2O3 nanobelt field-effect transistor and its low-temperature behavior, ACS Applied Materials & Interfaces, 12, 8437-8445 (2020).
4. Jin-Xin Chen, Xiao-Xi Li, Wei Huang*, Zhi-Gang Ji, and Hong-Liang Lu*, High-energy x-ray radiation effects on the exfoliated quasi-two-dimensional β-Ga2O3 nanoflake field-effect transistors, Nanotechnology, 31, 345206 (2020).
5. Yong Sun, Jinxin Chen, Hongliang Lu*, and Hong Dong*, The photoemission study of InSb/HfO2 stacks upon N2 rapid thermal annealing, Vacuum, 168, 108815 (2019).
6. Hong-Yan Chen, Hong-Liang Lu*, Jin-Xin Chen, and David Wei Zhang, Low-temperature one-step growth of AlON thin films with homogeneous Nitrogen-doping profile by plasma-enhanced atomic layer deposition, ACS Applied Materials & Interfaces, 9, 38662-38669 (2017).
5. Yong Sun, Jinxin Chen, Hongliang Lu*, and Hong Dong*, The photoemission study of InSb/HfO2 stacks upon N2 rapid thermal annealing, Vacuum, 168, 108815 (2019).
6. Hong-Yan Chen, Hong-Liang Lu*, Jin-Xin Chen, and David Wei Zhang, Low-temperature one-step growth of AlON thin films with homogeneous Nitrogen-doping profile by plasma-enhanced atomic layer deposition, ACS Applied Materials & Interfaces, 9, 38662-38669 (2017).