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Research
>> New Semiconductor
High-performance Electrical and Optoelectronic Properties Based on β-Ga
2
O
3
Materials
Excellent chemical and thermal stability, high pressure resistance and low loss characteristics make β-Ga
2
O
3
have a wide range of application prospects in the field of high temperature, high frequency and high power electronic devices. The β-Ga
2
O
3
material has a very high response rate to the 254 nm deep ultraviolet band and can be used as the solar blind detector
Microdisplay &
Visible Light Communication
Owing to advantages of wide bandgap, high carrier mobility, and stable chemical properties of III-group nitrides, GaN-based light emitting diodes (LEDs) have the characteristics of high efficiency, high power, high frequency, high operating temperature, and long lifetime. As self-emitting solid-state semiconductor devices, GaN-based LEDs have become……
