PUBLICATIONS

  1. Hong-Ping Ma, Xiao-Xi Li, Jia-He Yang, Peihong Cheng, Wei Huang, Jingtao Zhu, Tien-Chien Jen, Qixin Guo, Hong-Liang Lu *, and David Wei Zhang, Composition and properties control growth of high-quality GaOxNy film by one-step plasma-enhanced atomic layer deposition, Chemistry of Materials , 31(18) 7405-7416 (2019).
  2. Hong-Ping Ma, Jia-He Yang, Jia-Jia Tao, Kai-Ping Yuan, Pei-Hong Cheng, Wei Huang, Jia-Cheng Wang, Qi-Xin Guo, Hong-Liang Lu *, and David Wei Zhang, Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting, Nano Energy , 66, 104089 (2019).
  3. Jin-Xin Chen, Xiao-Xi Li, Hong-Ping Ma, Wei Huang, Zhi-Gang Ji, Changtai Xia, Hong-Liang Lu *, and David Wei Zhang, Investigation of the mechanism for ohmic contact formation in Ti/Al/Ni/Au contacts to β‑Ga2O3 nanobelt field-effect transistors,  ACS Applied Materials & Interfaces , 11(35), 32127-32134 (2019).
  4. Qing-Hua Ren, Yan Zhang, Tao Wang, Xin Ou, and Hong-Liang Lu*, Facile synthesis and photoluminescence mechanism of ZnO nanowires decorated with Cu nanoparticles grown by atomic layer deposition, ACS Applied Electronic Materials, 1(8), 1616-1625 (2019).
  5. Li-Yuan Zhu, Kaiping Yuan, Jian-Guo Yang, Hong-Ping Ma, Tao Wang, Xin-Ming Ji, Ji-Jun Feng, Anjana Devi, and Hong-Liang Lu* , Fabrication of heterostructured p-CuO/n-SnO2 core-shell nanowires for enhanced sensitive and selective formaldehyde detection, Sensors and Acutators B: Chemical , 290, 233-241 (2019).
  6. Jiajia Tao, Hong-Liang Lu *, Yang Gu, Hong-Ping Ma, Xing Li, Jin-Xin Chen, Wen-Jun Liu, Hang Zhang, and Ji-Jun Feng, Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 film, Applied Surface Science, 476, 733-740 (2019).
  7. Hao-Hao Li, Guang-Jie Yuan, Bo Shan, Xiao-Xin Zhang, Hong-Ping Ma, Ying-Zhong Tian, Hong-Liang Lu, and Johan Liu, Atomic layer deposition of buffer layers for the growth of vertically aligned carbon nanotube arrays, Nanoscale Research Letters, 14, 119 (2019).
  8. Cheng-Zhou Hang, Chen Wang, Bin Gao, Huan Chen, Ming-Hong Xu, Liang Hao, and Hong-Liang Lu, Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory, Applied Physics Letters, 114(11), 112102 (2019).
  9. Xing Li, Hong-Liang Lu *, Hong-Ping Ma, Jian-Guo Yang, Jin-Xin Chen, Wei Huang, Qixin Guo, Ji-Jun Feng, and David Wei Zhang, Chemical, optical and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition, Current Applied Physics, 19 (2), 72-81 (2019).
  10. Bao Zhu, Xiaohan Wu, Wen-Jun Liu, Hong-Liang Lu, David Wei Zhang, Zhongyong Fan, and Shi-Jin Ding*, High-Performance On-chip supercapacitors based on mesoporous silicon coated with ultrathin atomic layer-deposited In2O3 films, ACS Applied Materials & Interfaces, 11(1), 747-752 (2019).
  11. Hong-Ping Ma, Jia-He Yang, Jian-Guo Yang, Li-Yuan Zhu, Wei Huang, Guang-Jie Yuan, Ji-Jun Feng, Tien-Chien Jen, and  Hong-Liang Lu *, Systematic study of the SiOx film with different stoichiometry by plasma-enhanced atomic layer deposition and its application in SiOx/SiO2 super-lattice, Nanomaterials, 9 (1), 55 (2019).
  1. Hong-Ping Ma, Hong-Liang Lu *, Tao Wang, Jian-Guo Yang, Xing Li, Jin-Xin Chen, Jia-Jia Tao, Jing-Tao Zhu, Qixin Guo, and David Wei Zhang, Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition, Journal of Materials Chemistry C, 6, 46 (2018).
  2. Li-Yuan Zhu, Jian-Guo Yang, Kaiping Yuan, Hong-Yan Chen, Tao Wang, Hong-Ping Ma, Wei Huang,  Hong-Liang Lu *, and David Wei Zhang, Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition, APL Materials, 6, 121110 (2018).
  3. Hong-Ping Ma, Hong-Liang Lu *, Jia-He Yang, Xiao-Xi Li, Tao Wang, Wei Huang, Guang-Jie Yuan, Fadei F. Komarov, and David Wei Zhang, Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition, Nanomaterials, 8, 1008 (2018).
  4. Jin-Xin Chen, Jia-Jia Tao, Hong-Ping Ma, Hao Zhang, Ji-Jun Feng, Wen-Jun Liu, Changtai Xia,  Hong-Liang Lu *, and David Wei Zhang, Band alignment of AlN/beta-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy, Applied Physics Letters, 112, 261602 (2018).
  5. Tao Wang, Hong-Ping Ma, Jian-Guo Yang, Jing-Tao Zhu, Hao Zhang, Ji-Jun Feng, Shi-Jin Ding,  Hong-Liang Lu *, and David Wei Zhang, Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition, Journal of Alloys and Compounds, 744, 381-385 (2018).
  6. Qing-Hua Ren, Yan Zhang, Hong-Liang Lu*, Yong-Ping Wang, Wen-Jun Liu, Xin-Ming Ji, Anjana Devi*, An-Quan Jiang, and David Wei Zhang*, Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors, ACS Applied Materials & Interfaces, 10, 468-476 (2018).
  7. Qingqing Pang, Hongliang Chen, Xiuyan Wang, Tao Wang, Deyan Wang, Shaoguang Feng, Hongliang Lu, and Qiaowei Li, Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold-ZrO2 Nanofilms, Advanced Electronic Materials, 4, 1700424 (2018). 
  8. Zhaoqing Feng, Qian Feng, Jincheng Zhang, Xiang Li, Fuguo Li, Lu Huang,Hong-Yan Chen, Hong-Liang Lu, Yue Hao, Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy, Applied Surface Sciecne, 434, 440-444 (2018). 
  1. Yuanfeng Xu, Hao Zhang, Hezhu Shao, Gang Ni, Jing Li, Hongliang Lu, Rongjun Zhang, Bo Peng, Yongyuan Zhu, Heyuan Zhu, and Costas M. Soukoulis, First-principles study on the electronic, optical, and transport properties of monolayer alpha- and beta-GeSe, Physical Review B, 96, 245421, (2017).
  2. Mingxiang Hu, Feng Teng, Hongyu Chen, Mingming Jiang, Yuzhu Gu, Hongliang Lu, Linfeng Hu, and Xiaosheng Fang, Novel Omega-Shaped Core-Shell Photodetector with High Ultraviolet Selectivity and Enhanced Responsivity, Advanced Functional Materials, 27, 1704477 (2017).
  3. Hong-Yan Chen, Hong-Liang Lu*, Jin-Xin Chen, Feng Zhang, Xin-Ming Ji, Wen-Jun Liu, Xiao-Feng Yang, and David Wei Zhang*, Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition, ACS Applied Materials & Interfaces, (2017).
  4. Kaiping Yuan, Qi Cao, Xinyu Li, Hong-Yan Chen, Yonghui Deng, Yuan-Yuan Wang, Wei Luo, Hong-Liang Lu*, and David Wei Zhang*, Synthesis of WO3@ZnWO4@ZnO-ZnO Hierarchical Nanocactus Arrays for Efficient Photoelectrochemical Water Splitting, Nano Energy, 41, 543-551 (2017).
  5. Yunna Zhu, Xinglu Wang, Chen Liu, Tao Wang, Hongyan Chen, Wei-Hua Wang, Yahui Cheng, Weichao Wang, Jiaou Wang, Shengkai Wang, Kyeongjae Cho, Hui Liu*, Hong-Liang Lu*, Hong Dong*, Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing, Surfaces and Interfaces, 9, 51-57 (2017).
  6. Kaiping Yuan, Qi Cao, Hong-Liang Lu*, Miao Zhong, Xiuzhen Zheng, Hong-Yan Chen, Tao Wang, Jean-Jacques Delaunay, Wei Luo, Liwu Zhang, Yuan-Yuan Wang, Yonghui Deng, Shi-Jin Ding, and David Wei Zhang*, Oxygen-deficient WO3–x@TiO2–x core-shell nanosheets for efficient photoelectrochemical oxidation of neutral water solutions, Journal of Materials Chemistry A, 5, 14697-14706 (2017). 
  7. Wen-Jun Liu, You-HangWang, Li-Li Zheng, Hong-Liang Lu, Shi-Jin Ding*, Stability enhancement of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels, Microelectronic Engineering, 167, 105-109 (2017).
  8. Long Sun, Hong-Liang Lu*, Hong-Yan Chen, Tao Wang, Xin-Ming Ji, Wen-Jun Liu, Dongxu Zhao, Anjana Devi, Shi-Jin Ding, David Wei Zhang, Effects of post annealing treatments on the interfacial chemical properties and band alignment of AlN/Si structure prepared by atomic layer deposition, Nanoscale Research Letters, 12, 102 (2017).
  1. Hong-Yan Chen, Hong-Liang Lu*, Long Sun, Qing-Hua Ren, Hao Zhang, Xin-Ming Ji, Wen-Jun Liu, Shi-Jin Ding, Xiao-Feng Yang, and David Wei Zhang*, Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer,  Scientific Reports , 6, 38486 (2016).
  2. Bo Peng, Hao Zhang, Hezhu Shao, Hongliang Lu, David Wei Zhang, and Heyuan Zhu, High thermoelectric performance of Weyl semimetal TaAs, Nano Energy, 30, 225 (2016).
  3. Bo Peng, Hao Zhang, Hezhu Shao, Yuanfeng Xu, Rongjun Zhang, Hongliang Lu, David Wei Zhang, and Heyuan Zhu, First-principles prediction of ultralow lattice thermal conductivity of dumbbell silicene: A comparison with low-buckled silicene, ACS Applied Materials & Interfaces, 8, 20977 (2016).
  4. Yuan Zhang, Hong-Liang Lu*, Tao Wang, Qing-Hua Ren, Hong-Yan Chen, Hao Zhang, Xin-Ming Ji, Wen-Jun Liu, Shi-Jin Ding, and David Wei Zhang, Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing, Physical Chemistry Chemical Physics, 18, 16377 (2016).
  5. Lei Wei, Qi-Xuan Liu, Bao Zhu, Wen-Jun Liu, Shi-Jin Ding*, Hong-Liang Lu, Anquan Jiang, and David Wei Zhang, Low-cost and high-productivity three-dimensional nanocapacitors based on stand-up ZnO nanowires for energy storage, Nanoscale Research Letters, 11, 213 (2016).
  6. You-Hang Wang, Qian Ma, Li-Li Zheng, Wen-Jun Liu, Shi-Jin Ding, Hong-Liang Lu, David Wei Zhang, Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3 Thin-Film Transistors by Low-Temperature Annealing in Air, IEEE Transactions on Electron Device, 63, 1893 (2016).
  7. Qing-Hua Ren, Yan Xu, Hong-Liang Lu*, Hong-Yan Chen, De-Hui Li, Wen-Jiu Liu, Shi-Jin Ding, An-Quan Jiang, and David Wei Zhang, Surface-plasmon mediated photoluminescence enhancement of Pt-coated ZnO nanowires by inserting an atomic-layer-deposited Al2O3 spacer layer, Nanotechnology, 27, 165705 (2016).
  8. Jian-Shuang Liu, Hong-Liang Lu*, Sai-Sheng Xu, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Influence of NH3 annealing on the chemical states of HfO2/Al2O3 stacks studied by X-ray photoelectron spectroscopy, Vacuum, 124, 60 (2016).
  9. Ji-Ping Xu, Rong-Jun Zhang, Yuan Zhang, Zi-Yi Wang, Lei Chen, Qing-Hua Huang, Hong-Liang Lu, Song-You Wang, Yu-Xiang Zheng, Liang-Yao Chen, The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry, Physical Chemistry Chemical Physics, 18, 3316 (2016).
  10. Victor Luo*, Xing-Tao Xue, Kuan-Chieh Yu, Meng Jin, Hong-Liang Lu*, David Wei Zhang, Method to Improve the Process Efficiency for Copper Pillar Electroplating, Journal of The Electrochemical Society, 163, E39 (2016).
  11. Wen-Jun Liu, Lin Chen, Peng Zhou, Qing-Qing Sun, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang, Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device, Jounal of Nanomaterials, 10, 6751497 (2016).
  1. Yuan Zhang, Hong-Liang Lu*, Tao Wang, Qing-Hua Ren, Yu-Zhu Gu, De-Hui Li, and David Wei Zhang, Facile synthesis and enhanced luminescent properties of ZnO/HfO2 core-shell nanowires, Nanoscale, 7, 15462 (2015).
  2. Hong-Yan Chen, Hong-Liang Lu*, Qing-Hua Ren, Yuan Zhang, Xiao-Feng Yang, Shi-Jin Ding, and David Wei Zhang*, Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer, Nanoscale, 7, 15142 (2015).
  3. Yu-Zhu Gu, Hong-Liang Lu,* Yuan Zhang,Peng-Fei Wang, Shi-Jin Ding,and David Wei Zhang, Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al2O3/p-Si hheterojunction,  Optics Express,  23, 24456 (2015).
  4. Yang Geng, Wen Yang, Hong-Liang Lu*, Yuan Zhang, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang, Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin Film Transistors by Post Annealing in O2, IEEE Electron Device Letters, 35, 1266, (2014).
  5. Hong-Liang Lu*, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3Oy high-k dielectric on Ge substrate, Applied Physics A-Materials Science & Processing,117, 1479, (2014).
  6. Hong-Liang Lu*, Yu-Zhu Gu, Yuan Zhang, Xin-Yan Liu, Peng-Fei Wang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al2O3 buffer layer, Optics Express, 22 , 22184, (2014).
  7. Hong-Liang Lu*, Ming Yang, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Peng-Fei Wang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers, Applied Physics Letters, 104, 161602, (2014).
  8. Qiu-Xiang Zhang, Bao Zhu, Shi-Jin Ding, Hong-Liang Lu, Qing-Qing Sun, Peng Zhou, and Wei Zhang, Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 Stacks for High-Performance MIM Capacitors, IEEE Electron Device Letters, 35, 1121, (2014).
  9. Minghong Wang, Xiqing Wang, Qin Yue, Yu Zhang, Chun Wang, Jin Chen, Huaqiang Cai, Hongliang Lu, Ahmed A. Elzatahry, and Dongyuan Zhao, Templated fabrication of core-shell magnetic mesoporous carbon microspheres in 3-dimensional ordered macroporous silicas, Chemistry of Materials, 26, 3316, (2014).
  10. Yu-Zhu Gu, Hong-Liang Lu*, Yang Geng, Zhi-Yuan Ye, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and   David Wei Zhang, Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition, Nanoscale Research Letters, 8, 107 (2013).
  11. Zhi-Yuan Ye, Hong-Liang Lu*, Yang Geng, Yu-Zhu Gu, Zhang-Yi Xie, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition, Nanoscale Research Letters, 8, 108 (2013).
  12. Shang-Bin Zhu, Yang Geng, Hong-Liang Lu*, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition, Journal of Alloys and Compounds, 577, 340 (2013).
  13. Jian-Shuang Liu, Yang Geng, Lin Chen, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu*, and David Wei Zhang, Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing, Thin Solid Films, 529, 230 (2013).
  14. Yang Geng, Zhang-Yi Xie, Wen Yang, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang,  Structural, Optical, and Electrical Properties of Hf-doped ZnO Films Deposited by Atomic Layer Deposition, Surface & Coatings Technology, (2013).
  15. Yang Geng, Zhang-Yi Xie, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang, Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition, ECS Journal of Solid State Science and Technology, 1, N45 (2012).
  16. Zhang-Yi Xie, Hong-Liang Lu*, Sai-Sheng Xu, Yang Geng, Qing-Qing Sun, Shi-Jing Ding, and David Wei Zhang, Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy, Applied Physics Letters, 101, 252111 (2012).
  17. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories, Applied Physics Letters, 100, 063509 (2012).
  18. Jian-Shuang Liu, Yan Xu, Qing-Qing Sun, Hongliang Lu*, and David Wei Zhang, Characterizations of NbAlO thin films grown by atomic layer deposition, Materials Letters, 65, 2182 (2012).
  19. Yang Geng, Li Guo, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang*, Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition, Journal of Physics Chemistry C, 115,12317 (2011).
  20. Lin Chen, Hong-Yan Gou, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Peng-Fei Wan, Shi-Jin Ding, and David Wei Zhang, Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals, IEEE Electron Device Letters, 32, 794 (2011).
  21. Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, Investigation of Thermal Stability of Atomic-Layer-Deposited MgO Thin Films on Si(100) Using X-Ray Photoelectron Spectroscopy, Electrochemical and Solid-State Letters, 13, G25, (2010).
  22. Hong-Liang Lu, Xiao-Liang Wang, Masakazu Sugiyama, and Yukihiro Shimogaki, Investigation on GaAs surface treated with dimethylaluminumhydride, Applied Physics Letters, 95, 212102, (2009).
  23. Hong-Liang Lu, Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama, In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy, Applied Physics Letters, 95, 152103, (2009).
  24. Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, Density functional theory study on the reaction mechanisms of bis(cyclopentadienyl) magnesium with hydrogenated and hydroxylated Si (100)-(2×1) surfaces, Journal of Physics Chemistry A, 113, 8791, (2009).
  25. H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli, and G. Pavia, Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors, Journal of The Electrochemical Society, 155, H807, (2008).
  26. H. L. Lu, G. Scarel, M. Alia, M. Fanciulli, S.J. Ding, and D.W. Zhang, Spectroscopic ellipsometry study of thin NiO films grown on Si(100) by atomic layer deposition, Applied Physics Letters, 92, 222907, (2008).
  27. A. Lamperti, S. Spiga, H. L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, and M. Fanciulli, Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN), Microelectronic Engineering, 85, 2425-2429, (2008).
  28. S. Schamm, P.E. Coulon, S. Miao, S.N. Volkos, H. L. Lu, L. Lamagna, C. Wiemer, D. Tsoutsou, G. Scarel, and M. Fanciulli, Chemical/Structural Nanocharacterization And Electrical Properties of ALD-grown La2O3/Si Interfaces For Advanced Gate Stacks, Journal of The Electrochemical Society, 156, H1, (2008).
  29. Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang, and Li-Kang Wang, X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates, Journal of Material Research, 22, 1214, (2007).
  30. Qing-Qing Sun, Wei Chen, Shi-Jin Ding, Min Xu, Hong-Liang Lu, Hans-Cristian Lindh-Rengifo, David Wei Zhang, and Li-Kang Wang, Comparative study of passivation mechanism of oxygen vacancy with fluorine in HfO2 and HfSiO4, Applied Physics Letters, 90, 142904, (2007).
  31. Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang, and Li-Kang Wang, Quantum chemical study of the initial surface reactions of HfO2 atomic layer deposition on the hydroxylated GaAs (001)-4×2 surface, Applied Physics Letters, 89, 162905, (2006).
  32. Hong-Liang Lu, Liang-Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang Wang, Characterization of Al2O3/GaAs interface improved by NH3 plasma pretreatment, Applied Physics Letters, 89, 152910, (2006).
  33. Hong-Liang Lu, Wei Chen, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang Wang, Quantum chemical study of adsorption and dissociation of H2S on the Gallium-rich GaAs (001)-4×2 surface, Journal of Physical Chemistry B, 110, 9529, (2006).
  34. Wei Chen, Hong-Liang Lu, David Wei Zhang, Min Xu, Jie Ren, Jian-Yun Zhang, Ji-Tao Wang, and Li-Kong Wang, Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100) -2×1: Initial stage of atomic layer deposition of HfO2 on SiGe surface, Applied Physics Letters, 86, 142901, (2005).