Home / Publication
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
20. Dingbo Chen, Dong Li, Guang Zeng, Fang-Chen Hu, Yu-Chun Li, Yu-Chang Chen, Xiao-Xi Li, Jun Tang, Chao Shen, Nan Chi, David Wei Zhang, and Hong-Liang Lu*, GaN-based micro-light-emitting diode driven by a monolithic integrated ultraviolet phototransistor, IEEE Electron Device Letters, 43, 80-83(2022).
 
 
 
 
 
 
7. Yingguo Yang, Haizhou Lu, Shanglei Feng, Lifeng Yang, Hua Dong, Jiaou Wang, Chen Tian, Lina Li, Hong-Liang Lu, Jaeki Jeong, Shaik M. Zakeeruddin, Yuhang Liu, Michael Grätzel, Anders Hagfeldt, Modulation of perovskite crystallization process towards highly efficient and stable perovskite solar cells via MXene quantum dots modified SnO2, Energy & Environmental Science, 14, 3447-3454(2021). 
 
 
 
 
 
 
13. Xiao-Xi Li, Xin-Yu Chen, Jin-Xin Chen, Guang Zeng, Yu-Chun Li, Wei Huang, Zhi-Gang Ji, David Wei Zhang and Hong-Liang Lu*, Dual-gate MoS2 phototransistor with atomic-layer-deposited HfO2 as top-gate dielectric for ultrahigh photoresponsivity,  Nanotechnology, 32, 21(2021).
 
1. Xing-Tao Xue, Li-Yuan Zhu, Kai-Ping Yuan, Chao Zeng, Xiao-Xi Li, Hong-Ping Ma, Hong-Liang Lu*, and David Wei Zhang, ZnO branched p-CuxO@n-ZnO heterojunction nanowires for improving acetone gas sensing performance,  Sensors and Acutators B: Chemical,  324, 128729(2020).
 
2. Yinghui Shang, Chu Wu, Chengzhou Hang, Hongliang Lu, and Qigang Wang*, Hofmeister-effect-guided ionohydrogel design as printable bioelectronic devices, Advanced Materials, 32, 2000189(2020).
 
3. Xing Li, Jian-Guo Yang, Hong-Ping Ma, Yu-Hang Liu, Zhi-Gang Ji*, Wei Huang, Xin Ou, David Wei Zhang, and Hong-Liang Lu*, Atomic layer deposition of Ga2O3/ZnO composite films for high-performance forming-free resistive switching memory, ACS Applied Materials & Interfaces, 12(27), 30538-30547(2020).
 
4. Cheng-Zhou Hang, Xue-Feng Zhao, Song-Yan Xi, Ying-Hui Shang, Kai-Ping Yuan, Fan Yang, Qi-Gang Wang, Jia-Cheng Wang, David Wei Zhang, and Hong-Liang Lu*, Highly stretchable and self-healing strain sensors for motion detection in wireless human-machine interface, Nano Energy, 76, 105064(2020).
 
5. Wei Wang, Xiao-Xi Li, Tao Wang, Wei Huang*, Zhi-Gang Ji, David Wei Zhang, and Hong-Liang Lu*, Investigation of light-stimulated α-IGZO-based photoelectric transistors for neuromorphic applications, IEEE Transactions on Electron Devices,  PP(99), 1-5(2020).
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
  1. Hong-Yan Chen, Hong-Liang Lu*, Long Sun, Qing-Hua Ren, Hao Zhang, Xin-Ming Ji, Wen-Jun Liu, Shi-Jin Ding, Xiao-Feng Yang, and David Wei Zhang*, Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer,   Scientific Reports  , 6, 38486 (2016).
  2. Bo Peng, Hao Zhang, Hezhu Shao, Hongliang Lu, David Wei Zhang, and Heyuan Zhu, High thermoelectric performance of Weyl semimetal TaAs, Nano Energy, 30, 225 (2016).
  3. Bo Peng, Hao Zhang, Hezhu Shao, Yuanfeng Xu, Rongjun Zhang, Hongliang Lu, David Wei Zhang, and Heyuan Zhu, First-principles prediction of ultralow lattice thermal conductivity of dumbbell silicene: A comparison with low-buckled silicene, ACS Applied Materials & Interfaces, 8, 20977 (2016).
  4. Yuan Zhang, Hong-Liang Lu*, Tao Wang, Qing-Hua Ren, Hong-Yan Chen, Hao Zhang, Xin-Ming Ji, Wen-Jun Liu, Shi-Jin Ding, and David Wei Zhang, Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing, Physical Chemistry Chemical Physics, 18, 16377 (2016).
  5. Lei Wei, Qi-Xuan Liu, Bao Zhu, Wen-Jun Liu, Shi-Jin Ding*, Hong-Liang Lu, Anquan Jiang, and David Wei Zhang, Low-cost and high-productivity three-dimensional nanocapacitors based on stand-up ZnO nanowires for energy storage, Nanoscale Research Letters, 11, 213 (2016).
  6. You-Hang Wang, Qian Ma, Li-Li Zheng, Wen-Jun Liu, Shi-Jin Ding, Hong-Liang Lu, David Wei Zhang, Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3 Thin-Film Transistors by Low-Temperature Annealing in Air, IEEE Transactions on Electron Device, 63, 1893 (2016).
  7. Qing-Hua Ren, Yan Xu, Hong-Liang Lu*, Hong-Yan Chen, De-Hui Li, Wen-Jiu Liu, Shi-Jin Ding, An-Quan Jiang, and David Wei Zhang, Surface-plasmon mediated photoluminescence enhancement of Pt-coated ZnO nanowires by inserting an atomic-layer-deposited Al2O3 spacer layer, Nanotechnology, 27, 165705 (2016).
  8. Jian-Shuang Liu, Hong-Liang Lu*, Sai-Sheng Xu, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Influence of NH3 annealing on the chemical states of HfO2/Al2O3 stacks studied by X-ray photoelectron spectroscopy, Vacuum, 124, 60 (2016).
  9. Ji-Ping Xu, Rong-Jun Zhang, Yuan Zhang, Zi-Yi Wang, Lei Chen, Qing-Hua Huang, Hong-Liang Lu, Song-You Wang, Yu-Xiang Zheng, Liang-Yao Chen, The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry, Physical Chemistry Chemical Physics, 18, 3316 (2016).
  10. Victor Luo*, Xing-Tao Xue, Kuan-Chieh Yu, Meng Jin, Hong-Liang Lu*, David Wei Zhang, Method to Improve the Process Efficiency for Copper Pillar Electroplating, Journal of The Electrochemical Society, 163, E39 (2016).
  11. Wen-Jun Liu, Lin Chen, Peng Zhou, Qing-Qing Sun, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang, Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device, Jounal of Nanomaterials, 10, 6751497 (2016).
  12. Yuan Zhang, Hong-Liang Lu*, Tao Wang, Qing-Hua Ren, Yu-Zhu Gu, De-Hui Li, and David Wei Zhang, Facile synthesis and enhanced luminescent properties of ZnO/HfO2 core-shell nanowires, Nanoscale, 7, 15462 (2015).
  13. Hong-Yan Chen, Hong-Liang Lu*, Qing-Hua Ren, Yuan Zhang, Xiao-Feng Yang, Shi-Jin Ding, and David Wei Zhang*, Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer, Nanoscale, 7, 15142 (2015).
  14. Yu-Zhu Gu, Hong-Liang Lu,* Yuan Zhang,Peng-Fei Wang, Shi-Jin Ding,and David Wei Zhang, Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al2O3/p-Si hheterojunction,  Optics Express,  23, 24456 (2015).
  15. Yang Geng, Wen Yang, Hong-Liang Lu*, Yuan Zhang, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang, Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin Film Transistors by Post Annealing in O2, IEEE Electron Device Letters, 35, 1266, (2014).
  16. Hong-Liang Lu*, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3Oy high-k dielectric on Ge substrate, Applied Physics A-Materials Science & Processing,117, 1479, (2014).
  17. Hong-Liang Lu*, Yu-Zhu Gu, Yuan Zhang, Xin-Yan Liu, Peng-Fei Wang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al2O3 buffer layer, Optics Express, 22 , 22184, (2014).
  18. Hong-Liang Lu*, Ming Yang, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Peng-Fei Wang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers, Applied Physics Letters, 104, 161602, (2014).
  19. Qiu-Xiang Zhang, Bao Zhu, Shi-Jin Ding, Hong-Liang Lu, Qing-Qing Sun, Peng Zhou, and Wei Zhang, Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 Stacks for High-Performance MIM Capacitors, IEEE Electron Device Letters, 35, 1121, (2014).
  20. Minghong Wang, Xiqing Wang, Qin Yue, Yu Zhang, Chun Wang, Jin Chen, Huaqiang Cai, Hongliang Lu, Ahmed A. Elzatahry, and Dongyuan Zhao, Templated fabrication of core-shell magnetic mesoporous carbon microspheres in 3-dimensional ordered macroporous silicas, Chemistry of Materials, 26, 3316, (2014).
  21. Yu-Zhu Gu, Hong-Liang Lu*, Yang Geng, Zhi-Yuan Ye, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and   David Wei Zhang, Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition, Nanoscale Research Letters, 8, 107 (2013).
  22. Zhi-Yuan Ye, Hong-Liang Lu*, Yang Geng, Yu-Zhu Gu, Zhang-Yi Xie, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition, Nanoscale Research Letters, 8, 108 (2013).
  23. Shang-Bin Zhu, Yang Geng, Hong-Liang Lu*, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition, Journal of Alloys and Compounds, 577, 340 (2013).
  24. Jian-Shuang Liu, Yang Geng, Lin Chen, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu*, and David Wei Zhang, Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing, Thin Solid Films, 529, 230 (2013).
  25. Yang Geng, Zhang-Yi Xie, Wen Yang, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang,  Structural, Optical, and Electrical Properties of Hf-doped ZnO Films Deposited by Atomic Layer Deposition, Surface & Coatings Technology, (2013).
  26. Yang Geng, Zhang-Yi Xie, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang, Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition, ECS Journal of Solid State Science and Technology, 1, N45 (2012).
  27. Zhang-Yi Xie, Hong-Liang Lu*, Sai-Sheng Xu, Yang Geng, Qing-Qing Sun, Shi-Jing Ding, and David Wei Zhang, Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy, Applied Physics Letters, 101, 252111 (2012).
  28. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories, Applied Physics Letters, 100, 063509 (2012).
  29. Jian-Shuang Liu, Yan Xu, Qing-Qing Sun, Hongliang Lu*, and David Wei Zhang, Characterizations of NbAlO thin films grown by atomic layer deposition, Materials Letters, 65, 2182 (2012).
  30. Yang Geng, Li Guo, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang*, Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition, Journal of Physics Chemistry C, 115,12317 (2011).
  31. Lin Chen, Hong-Yan Gou, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Peng-Fei Wan, Shi-Jin Ding, and David Wei Zhang, Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals, IEEE Electron Device Letters, 32, 794 (2011).
  32. Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, Investigation of Thermal Stability of Atomic-Layer-Deposited MgO Thin Films on Si(100) Using X-Ray Photoelectron Spectroscopy, Electrochemical and Solid-State Letters, 13, G25, (2010).
  33. Hong-Liang Lu, Xiao-Liang Wang, Masakazu Sugiyama, and Yukihiro Shimogaki, Investigation on GaAs surface treated with dimethylaluminumhydride, Applied Physics Letters, 95, 212102, (2009).
  34. Hong-Liang Lu, Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama, In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy, Applied Physics Letters, 95, 152103, (2009).
  35. Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, Density functional theory study on the reaction mechanisms of bis(cyclopentadienyl) magnesium with hydrogenated and hydroxylated Si (100)-(2×1) surfaces, Journal of Physics Chemistry A, 113, 8791, (2009).
  36. H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli, and G. Pavia, Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors, Journal of The Electrochemical Society, 155, H807, (2008).
  37. H. L. Lu, G. Scarel, M. Alia, M. Fanciulli, S.J. Ding, and D.W. Zhang, Spectroscopic ellipsometry study of thin NiO films grown on Si(100) by atomic layer deposition, Applied Physics Letters, 92, 222907, (2008).
  38. A. Lamperti, S. Spiga, H. L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, and M. Fanciulli, Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN), Microelectronic Engineering, 85, 2425-2429, (2008).
  39. S. Schamm, P.E. Coulon, S. Miao, S.N. Volkos, H. L. Lu, L. Lamagna, C. Wiemer, D. Tsoutsou, G. Scarel, and M. Fanciulli, Chemical/Structural Nanocharacterization And Electrical Properties of ALD-grown La2O3/Si Interfaces For Advanced Gate Stacks, Journal of The Electrochemical Society, 156, H1, (2008).
  40. Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang, and Li-Kang Wang, X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates, Journal of Material Research, 22, 1214, (2007).
  41. Qing-Qing Sun, Wei Chen, Shi-Jin Ding, Min Xu, Hong-Liang Lu, Hans-Cristian Lindh-Rengifo, David Wei Zhang, and Li-Kang Wang, Comparative study of passivation mechanism of oxygen vacancy with fluorine in HfO2 and HfSiO4, Applied Physics Letters, 90, 142904, (2007).
  42. Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang, and Li-Kang Wang, Quantum chemical study of the initial surface reactions of HfO2 atomic layer deposition on the hydroxylated GaAs (001)-4×2 surface, Applied Physics Letters, 89, 162905, (2006).
  43. Hong-Liang Lu, Liang-Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang Wang, Characterization of Al2O3/GaAs interface improved by NH3 plasma pretreatment, Applied Physics Letters, 89, 152910, (2006).
  44. Hong-Liang Lu, Wei Chen, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang Wang, Quantum chemical study of adsorption and dissociation of H2S on the Gallium-rich GaAs (001)-4×2 surface, Journal of Physical Chemistry B, 110, 9529, (2006).
  45. Wei Chen, Hong-Liang Lu, David Wei Zhang, Min Xu, Jie Ren, Jian-Yun Zhang, Ji-Tao Wang, and Li-Kong Wang, Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100) -2×1: Initial stage of atomic layer deposition of HfO2 on SiGe surface, Applied Physics Letters, 86, 142901, (2005).