李晓茜
Xiao-Xi Li
1st Ph.D Student

e-mail:18212020023@fudan.edu.cn
Research Field:High-performance Electrical and Optoelectronic Properties Based on β-Ga2O3 Materials
Education & Work experience
2020.9-Present         Fudan University            College of Microelectronics                               Ph.D student              
2018.9-2020.9           Fudan University            College of Microelectronics                               M.S.               
2014.9-2018.9           Xidian University            College of Microelectronics                               B.S.
 
Publications
1. Jin-Xin Chen ‡, Xiao-Xi Li ‡, Hong-Ping Ma, Wei Huang, Zhi-Gang Ji, Chang-Tai Xia, Hong-Liang Lu*,  and David Zhang, Investigation of the mechanism for ohmic contact formation in Ti/Al/Ni/Au contacts to beta-Ga2O3 nanobelt field-effect transistors, ACS Applied Materials & Interfaces, 11(35), 32127-32134 (2019)  
2. Jin-Xin Chen ‡, Xiao-Xi Li ‡, Jia-Jia Tao, Hui-Yuan Cui, Wei Huang, Zhi-Gang Ji, Qing-Lin Sai, Chang-Tai Xia, Hong-Liang Lu*,  and David Zhang, Fabrication of a Nb-doped beta-Ga2O3 nanobelt field-effect transistor and its low-temperature behavior, ACS Applied Materials & Interfaces, 12(7), 8437-8445 (2020)  
3. Jin-Xin Chen ‡, Xiao-Xi Li ‡, Wei Huang, Zhi-Gang Ji, Su-Zhen Wu, Zhi-Qiang Xiao, Xin Ou, David Zhang, and Hong-Liang Lu*, High-energy X-ray radiation effects on the exfoliated quasi-two-dimensional beta-Ga2O3 nanoflake field-effect transistors, Nano Technology, 31(34), 345206-345214 (2020) 
4. Xiao-Xi Li ‡, Jin-Xin Chen ‡, Wei Huang*, Zhi-Gang Ji*, Su-Zhen Wu, Zhi-Qiang Xiao, and Hong-Liang Lu*, Effects of x-ray irradiation on vertical GaN-on-GaN schottky barrier diode biased on the applied Voltage, the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2020
5. Hong-Ping Ma, Xiao-Xi li, Jia-He Yang, Pei-Hong Chen, Wei Huang, Jing-Tao Zhu, Tien-Chien Jen, Qi-Xin Guo, Hong-Liang Lu*,  and David Zhang, Composition and properties control growth of high-quality GaOxNy film by one-step plasma-enhanced atomic layer deposition, Chemistry of Materials, 31(18), 7405-7416 (2019) 
6. Wei Wang, Xiao-Xi Li, Tao Wang, Wei Huang, Zhi-Gang Ji, David Zhang, and Hong-Liang Lu*, Investigation of light-stimulated alpha-IGZO based photoelectric transistors for neuromorphic applications, IEEE Transactions on Electron Devices, 67(8), 3141-3145 (2020) 
7. Wei Wang, Xiao-Xi Li, Wei Huang *, Zhi-Gang Ji, David Zhang, and Hong-Liang Lu*, An Analytical Model for Merged GaN Heterojunction Barrier Schottky Diodes with Inserting p-Si Technology, Superlattices and Microstructures,  2020
8. Hong-Ping Ma, Jia-He Yang, Xiao-Xi Li, Tao Wang, Wei Huang, Guang-Jie Yuan, Fadei F Komarov, Hong-Liang Lu*,  and David Zhang, Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition, Nanomaterials, 8(12), 2018